Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures

The subthreshold swing (SS) of MOSFETs decreases with temperature and then saturates below a critical temperature. Hopping conduction via the band tail has been proposed as possible cause for SS saturation. On other hand, numerical simulations have shown source-to-drain tunneling (SDT) current limits at low temperatures. It argued which transport mechanism dominates cryogenic current. Hence, first time, this paper presents an analytical model SDT corresponding SS, is validated by measurement on devices from advanced 16nm FinFET technology.